symbol v ds v gs i dm i ar e ar t j , t stg symbol typ max 31 40 59 75 r q j l 16 24 w j unction and storage temperature range a p d c 3 2 .1 -55 to 150 t a =70c i d continuous drain c urrent af maximum u nits parameter t a =25c t a =70c 3 0 maximum junction-to-ambient a steady-state 18 15 80 avalanche current b 30 c/w absolute maximum ratings t a =25c unless otherwise noted v v 12 pulsed drain current b power dissipation t a =25c g ate-source voltage drain-source voltage maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r q j a c/w a r epetitive avalanche energy 0.3mh b 135 m j AO4410 30v n-channel mosfet product summary v ds (v) = 30v i d = 18a (v gs = 10v) r ds(on) < 5.5m w (v gs = 10v) r ds(on) < 6.2m w (v gs = 4.5v) 1 00% uis tested 100% rg tested general description the AO4410 uses advanced trench technology to p rovide excellent r ds(on) , shoot-through immunity, b ody diode characteristics and ultra-low gate resistance. this device is ideally suited for use as a low side switch in notebook cpu core power conversion. soic-8 top view bottom view d d d d s s s g g d s alpha & omega semiconductor, ltd. w ww.aosmd.com nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
symbol min typ max units bv dss 30 v 1 t j =55c 5 i gss 100 na v gs(th) 0.8 1.1 1.5 v i d(on) 80 a 4.7 5.5 t j =125c 6.4 7.4 5.2 6.2 m w g fs 102 s v sd 0.64 1 v i s 4.5 a c iss 9130 10500 pf c oss 625 pf c rss 387 542 pf r g 0.2 0.4 0.8 w q g (4.5v) 72.4 85 nc q gs 13.4 nc q gd 16.8 nc t d(on) 11 15 ns t r 7 11 ns t d(off) 99 135 ns t f 13 19.5 ns t rr 33 40 ns q rr 22.2 30 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. gate drain charge v gs =0v, v ds =15v, f=1mhz switching parameters total gate charge gate source charge gate resistance v gs =0v, v ds =0v, f=1mhz v gs =10v, v ds =15v, i d =18a turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =0.83 w , r gen =3 w turn-off fall time turn-on delaytime m w v gs =4.5v, i d =15a i s =1a,v gs =0v v ds =5v, i d =18a maximum body-diode continuous current input capacitance output capacitance dynamic parameters r ds(on) static drain-source on-resistance forward transconductance diode forward voltage i dss m a gate threshold voltage v ds =v gs i d =250 m a v ds =30v, v gs =0v v ds =0v, v gs = 12v zero gate voltage drain current gate-body leakage current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery time body diode reverse recovery charge i f =18a, di/dt=100a/ m s drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =4.5v, v ds =5v v gs =10v, i d =18a reverse transfer capacitance i f =18a, di/dt=100a/ m s a: the value of r q j a is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. b : repetitive rating, pulse width limited by junction temperature. c. the r q j a is the sum of the thermal impedence from junction to lead r q j l and lead to ambient. d . the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the s oa curve provides a single pulse rating. f. the current rating is based on the t 10s junction to ambient thermal resistance rating. rev7: nov 2010 alpha & omega semiconductor, ltd. www.aosmd.com nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
typical electrical and thermal characteristics functions and reliability without notice. 0 1 2 3 4 5 0 10 20 30 40 50 60 70 80 90 q g (nc) figure 7: gate-charge characteristics v gs (volts) 100 1000 10000 100000 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 20 40 60 80 100 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z q q q q ja normalized transient thermal resistance c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 m s 10ms 1ms 0.1s 1s 10s dc r ds(on) limited t j(max) =150c t a =25c v ds =15v i d =18a single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =40c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 m s alpha & omega semiconductor, ltd. www.aosmd.com nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
typical electrical and thermal characteristics functions and reliability without notice. 0 10 20 30 40 50 60 0 1 2 3 4 5 v ds (volts) fig 1: on-region characteristics i d (a) v gs =2v 2.5v 10v 0 10 20 30 40 50 60 0 0.5 1 1.5 2 2.5 v gs (volts) figure 2: transfer characteristics i d (a) 4.0 4.5 5.0 5.5 6.0 0 10 20 30 40 50 60 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w w w w ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v v gs =4.5v 0 4 8 12 16 0 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m w w w w ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =18a 25c 125c i d =18a alpha & omega semiconductor, ltd. w ww.aosmd.com nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt t rr ar ar alpha & omega semiconductor, ltd. www.aosmd.com nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
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